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High-voltage Half-bridge GaN Power Stage
NSG65N15K is the latest GaN power stage device launched by NOVOSENSE. It is integrated with half-bridge driver NSD2621 and two pcs 650V GaN HEMT with 150mΩ conduction resistance, and the working current can reach 20A. Besides, NSG65N15K is integrated with the bootstrap diode, and built-in adjustable dead time, undervoltage protection, overtemperature protection, which make GaN applications more safe and reliable, and give full play to its advantages of high frequency and high speed.
Product Features
- Integrated 650V GaN HEMT and half-bridge driver
- GaN conduction resistance 150mΩ
- Non-reverse recovery loss
- Built-in LDO makes the driver voltage more stable and reliable
- High/low side independent UVLO protection
- Internal adjustable dead time
- Built-in bootstrap diode
- Operation ambient temperature: -40°C ~125°C
- Package form: QFN (9*9mm)
Application
- Half-bridge or full-bridge topologies such as totem poles PFC, ACF and LLC
- Adapter high-density power supply
- PV, motor driver and ESS
Functional Block Diagram
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