Si MOSFET
Si MOSFET are very suitable for applications with high frequency and high switching speed requirements. In switching power supplies (SMPS), the parasitic parameters of Si MOSFET are crucial, which determine the switching time, on-resistance, ringing (overshoot during switching) and back-gate breakdown, which are closely related to the efficiency of SMPS. Related.
As a power switch, the Si MOSFET selected should have extremely low on-resistance, low input capacitance (i.e. Miller capacitance) and extremely high gate breakdown voltage, which is even high enough to handle any peak voltage generated by the inductor. In addition, the parasitic inductance between the drain and source is also as low as possible, because low parasitic inductance can minimize the voltage peak during switching.
For gate driver or inverter applications, it is usually necessary to choose Si MOSFETs with low input capacitance (for fast switching) and higher drive capability
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