NSi6602M is an isolated dual-channel gate driver IC integrated with Miller clamp. It is suitable for driving IGBT, power MOSFET and SiC MOSFET in many applications. It can provide peak source/sink current of 5A/5A, and is integrated with Miller clamp with current of up to 5A. The minimum 150kV / μs common mode transient immunity (CMTI) ensures the robustness of the system. The maximum power supply voltage of the driver is 32V, and the input side is supplied with a power supply voltage of 3V to 5.5V. All power pins support undervoltage lockout (UVLO) protection. NSi6602M is designed with high drive current, dual-channel integrated Miller clamp function, excellent reliability, wide power supply voltage range and fast signal propagation, and is suitable for switching power supply systems which require high reliability, high power density and high efficiency.
Product Features
• Isolated dual-channel driver
• Input side supply voltage: 3V - 5.5V
• Driver side supply voltage: With UVLO function, voltage of up to 32V
• Peak 5A/5A source/sink current capacity
• Support Miller Clamp, with current of up to 5A
• High CMTI: 150kV/us
• 80ns typical propagation delay
• 5ns maximum delay matching
• 25ns maximum pulse width distortion
• Programmable dead zone time
• Acceptable minimum input pulse width 30ns
• Working temperature: -40°C~125°C
• Package form: SOIC18 (300mil)
• AEC-Q100 qualified
Safety Certificate
• UL1577 certification:
SOIC18 (300mil): 5kVrms for 1 minute
• CQC certification: GB4943.1 -2011
• CSA certification: components 5A qualified
• VDE certification: DIN V VDE V 0884-11: 2017-1
Application
• Isolated DC-DC and AC-DC power supplies for servers, telecom and industry
• DC-AC solar inverter
• Motor driver and EV charging
• UPS and battery charger
Functional Block Diagram
For more product information, please contact us.
